日本JEOL電子束光刻系統 JBX-3050MV
JBX-3050MV 是用于制作45nm～32nm 節點的掩模版/中間掩模版（mask/reticle）的可變矩形電子束光刻系統。 的技術實現了高速、高精度和高可靠性。 是基于加速電壓50 kV的可變矩形電子束和步進重復式的光刻系統｡
產品規格：
| 拼接精度 | Q±3.8 nm |
| 套刻精度 | Q±7 nm |
產品特點：
· JBX-3050MV 是用于制作45nm～32nm 節點的掩模版/中間掩模版（mask/reticle）的可變矩形電子束光刻系統。
· 的技術實現了高速、高精度和高可靠性。
· 是基于加速電壓50 kV的可變矩形電子束和步進重復式的光刻系統
· 利用步進重復式曝光的優點，結合曝光劑量調整功能及重疊曝光等功能，能支持下***代掩模版/中間掩模版（mask/reticle）圖形制作所需要的多種補償。
JBX - 3050 mv is used to produce 45 nm ~ 32 nm node mask template template (mask/reticle)/middle mask, a variable rectangular electron beam lithography system.The most advanced technology achieves high speed, high precision ａnd high reliability.It is a variable rectangular electron beam ａnd step - repeat lithography system based on 50 kV acceleration voltage.
Product specifications:
Stitching accuracy：Q + / - 3.8 nm
Set of time precision：Q + 7 nm
Product features:
JBX - 3050 mv is used to produce 45 nm ~ 32 nm node mask template template (mask/reticle)/middle mask, a variable rectangular electron beam lithography system.
· the most advanced technology achieves high speed, high precision ａnd high reliability.
· it is a variable rectangular electron beam based on the acceleration voltage of 50 kV ａnd a step-repeat lithography system
Exposure of the advantage of using the step ａnd repeat, combined with the exposure dose adjustment function ａnd overlap exposure, ａnd other functions, can support the next generation of mask template/middle mask template (mask/reticle) graphics required for a variety of compensation.
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